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| General Information |
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| Complete families of LEDs of 1600-4600
nm spectral range and a family of semiconductor
lasers of 1600-4600 nm range. |
- LEDs - GaSb-InAs Light Emitting Diodes
are designed for emitting at a spectral range
1.6~4.6 mm. They are fabricated from heterostructures
(HS) grown by liquid-phase epitaxy (LPE).
The output emission can be modulated by current
flowing in a forward direction. Devices can
be mounted in standard TO-18 package or in
TO-5 package with Built-in thermoelectric
(TE) cooler and thermistor to control temperature
and equipped with parabolic reflector to collimate
output beam.
View Details
- Photodiodes Diodes - Photodiodes are based
on heterostructures with wide band-gap material.
PD24 and PD25 models are based on GaInAsSb/GaAlAsSb
structure and PD36 is based on InAs/InAsSbP
structure. Fast response time makes them suitable
for detection of high-frequency modulated
IR radiation. The device is mounted on the
TO-18 package or TO-5 package with Built-in
TE cooler and thermistor and can be equipped
with the parabolic reflector.
View Details
- Drivers and Amplifiers - designed for power supply of all
models Mid-IR LED's
View Details
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| Warranty Information |
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