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MID-IR LED

 

GaSb-InAs Light Emitting Diodes are designed for emitting at a spectral range 1.6~4.6 mm. They are fabricated from heterostructures (HS) grown by liquid-phase epitaxy (LPE). The output emission can be modulated by current flowing in a forward direction. Devices can be mounted in standard TO-18 package or in TO-5 package with TE cooler and thermistor inside and equipped with parabolic reflector to collimate output beam. There are two Package Specifications: standard 5.4 mm TO-18 package and standard 9 mm TO- 5 packagewith Thermo Electric Cooler.

LEDs with Parabolic Reflector (PR)
Light Emitting Diodes LEDXX-PR are designed for emitting at a spectral range. Heterostructures (HS) are grown on InAs substrates. The output emission can be modulated by current flowing in a forward direction. The LED is mounted in a standard 5.4 mm TO-18 package with Parabolic Reflector.

LEDs with Parabolic Reflector and Window (PRW)
Light Emitting Diodes LEDXX-PRW are designed for emitting at a spectral range. Heterostructures (HS) are grown on InAs substrates. The LED is mounted in a standard 5.4 mm TO-18 package with a Parabolic Reflector and a window.
LEDs with TECooler, Thermoresistor and Quartz Window (TEC)
Light Emitting Diodes LEDXX-TEC-PR are designed for emitting at a spectral
range. LEDs are mounted inside a 9 mm package TO-5 with thermocooler and thermistor.

LEDs with TECooler, Thermoresistor, Quartz Window and Reflector (TEC-PR)
Light Emitting Diodes LEDXX-TEC-PR are designed for emitting at a spectral
range. LEDs are mounted inside a 9 mm package TO-5 with thermocooler, thermistor and Parabolic Reflector.

Axial and radial distribution of the LED radiation in the case of package TO-18 with parabolic reflector




Axial and radial distribution of the LED radiation in the case of package TO-5 with thermocooler and parabolic reflector



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