GaSb-InAs Light Emitting
Diodes are designed for emitting at a spectral
range 1.6~4.6 mm. They are fabricated from heterostructures (HS) grown by liquid-phase epitaxy (LPE). The output emission can be modulated by current flowing in a forward direction. Devices can be mounted in standard TO-18 package or in TO-5 package with TE cooler and thermistor inside and equipped with parabolic reflector to collimate output beam. There are two Package Specifications: standard 5.4 mm TO-18 package and standard 9 mm TO- 5 packagewith Thermo Electric Cooler.