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Manufactures complete families of
LEDs of 1600-3000 nm spectral range and manufactures
a family of semiconductor lasers of 1600-4600
nm range. |
- LEDs - GaSb-InAs Light Emitting Diodes are designed for emitting at a spectral range 1.6~4.6 mm. They are fabricated from heterostructures (HS) grown by liquid-phase epitaxy (LPE). The output emission can be modulated by current flowing in a forward direction. Devices can be mounted in standard TO-18 package or in TO-5 package with thermocooler and thermistor inside and equipped with parabolic reflector to collimate output beam.
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- Photodiodes Diodes - Photodiodes that IBSG manufactures are based on heterostructures with wide band-gap window. PD24 and PD25 models are based on GaInAsSb/GaAlAsSb structure, PD36 is based on InAs/InAsSbP structure. Fast response time makes them suitable for detection of high-frequency modulated IR laser radiation.The device is mounted on the TO-18 package or TO-5 package with thermocooler inside and can be equipped with the parabolic reflector.
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- LED Arrays - LED array is a kind of arrangement of similar or different LED-chips mounted in a single compact package and driven together or independently. Such kind of emitter is a powerful radiation source for portable optical analyzing systems.
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- Drivers - designed for power supply of all models Mid-IR LED's
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