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Photodiodes
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Photodiodes PD24 are fabricated from narrow band-gap GaInAsSb/AlGaAsSb-based heterostructures lattice matched to GaSb substrate, and are designed for detection of light signals in Mid-Infrared spectral range with cut-off wavelength around 2.4 μm.
Photodiodes PD36-03 series are fabricated from narrow band-gap InAsSbP/InAs-based heterostructures lattice matched to InAs substrate, and are designed for detection of light signals in Mid-Infrared spectral range with cut-off wavelength around 3.6 μm.
Photodiodes PD43-03 are fabricated from narrow band-gap InAsSb-based heterostructures lattice matched to InAs substrate, and are designed for detection of light signals in Mid-Infrared spectral range with cut-off wavelength around 4.8 μm.
Fast response time makes them suitable for detection of high-frequency modulated IR radiations. The device is mounted on the TO-18 package or TO-5 package with TE-cooler inside and can be equipped with the parabolic reflector.
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PA Photodiode series: PA Photodiodes are preamplified photodiodes with a parabolic reflector and a preamplifier built in Ø=12mm tube. For more information, please send email to sales@microsensortech.com
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